BF1102R,115 datasheet

Скачать datasheet 04023J0R3ABSTR.pdf Файл формата Pdf (20 страниц, 397,88 kb)

• Маркировка
  BF1102R,115
• Производитель
  NXP Semiconductors
• Описание
  NXP Semiconductors BF1102R,115 Configuration: Dual Continuous Drain Current: 0.04 A Current - Test: 15mA Current Rating: 40mA Drain-source Breakdown Voltage: 7 V Frequency: 800MHz Gain: - Gate-source Breakdown Voltage: +/- 6 V ID_COMPONENTS: 1949187 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Noise Figure: 2dB Package / Case: SC-70-6, SC-88, SOT-363 Power - Output: - Power Dissipation: 200 mW Series: - Transistor Polarity: N-Channel Transistor Type: N-Channel Dual Gate Voltage - Test: 5V Product Category: Transistors RF MOSFET Small Signal RoHS: yes Drain-Source Breakdown Voltage: 7 V Gate-Source Breakdown Voltage: +/- 6 V Factory Pack Quantity: 3000 Part # Aliases: BF1102R T/R Other Names: 934055823115::BF1102R T/R::BF1102R T/R
• Количество страниц
  14 шт.
• Формат
  PDF

  (Для просмотра требуется Adobe Acrobat Reader)
• Размер файла
  154,88 KB

BF1102R,115 datasheet скачать

BF1102R,115 datasheet